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inchange semiconductor product specification silicon pnp power transistors 2SB966 description ? ? with to-3pfa package ? complement to type 2sd1289 applications ? for use in low frequency and power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -120 v v ceo collector-emitter voltage open base -120 v v ebo emitter-base voltage open collector -5 v i c collector current -8 a i cm collector current-peak -12 a p c collector power dissipation t c =25 ?? 80 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors 2SB966 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ;i b =0 -120 v v cesat collector-emitter saturation voltage i c =-5a ;i b =-0.5a -1.5 v v besat base-emitter saturation voltage i c =-5a ;i b =-0.5a -2.0 v i cbo collector cut-off current v cb =-120v; i e =0 -50 | a i ebo emitter cut-off current v eb =-5v; i c =0 -50 | a h fe -1 dc current gain i c =-1a ; v ce =-5v 60 320 h fe -2 dc current gain i c =-5a ; v ce =-5v 20 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 200 pf f t transition frequency i c =-1a ; v ce =-5v 65 mhz
inchange semiconductor product specification 3 silicon pnp power transistors 2SB966 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.30mm)

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